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features ? logic level input ? input protection (esd) ?=thermal shutdown with latch ? overload protection ? short circuit protection ? overvoltage protection ? current limitation ? status feedback with external input resistor ? analog driving possible product summary drain source voltage v ds 60 v on-state resistance r ds ( on ) 100 m current limit i d ( lim ) 7 a nominal load current i d ( iso ) 3.5 a clamping energy e a s 1000 mj application ? all kinds of resistive, inductive and capacitive loads in switching or linear applications ? c compatible power switch for 12 v and 24 v dc applications ? replaces electromechanical relays and discrete circuits general description n channel vertical power fet in smart sipmos ? chip on chip tech- nology. providing embedded protection functions. protection overvoltage drain in esd hitfet source current 1 3 over- protection temperature short circuit protection + dv/dt lim itation lim itation v bb short circuit protection load 2 overload protection m ? aec qualified ? green product (rohs compliant) datasheet 1 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
maximum ratings at tj = 25 c unless otherwise specified parameter symbol value unit drain source voltage v ds 60 v drain source volta g e for short circuit p rotection v ds ( sc ) 32 continuous input current 1) -0.2v v in 10v v in < -0.2v or v in > 10v i in no limit | i in | 2 ma operating temperature t j - 40 ... +150 c storage temperature t st g - 55 ... +150 power dissipation t c = 25 c p tot 50 w unclamped single pulse inductive energy i d(iso) = 3.5 a e as 1000 mj e lectro s tatic d ischarge voltage (human body model) according to mil std 883d, method 3015.7 and eos/esd assn. standard s5.1 - 1993 v esd 3000 v load dump protection v loaddump 2) = v a + v s v in =low or high; v a =13.5 v t d = 400 ms, r i = 2 , i d =0,5*3.5a t d = 400 ms, r i = 2 , i d = 3.5a v ld 75 70 thermal resistance junction - case: r thjc 2.5 k/w junction - ambient: r thj a 75 smd version, device on pcb: 3) r thj a 45 1 in case of thermal shutdown a minimum sensor holding current of 500 a has to be guaranteed (see also page 3). 2 v loaddump is setup without the dut connected to the generator per iso 7637-1 and din 40839 3 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb mounted vertical without blown air. datasheet 2 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
electrical characteristics parameter symbol values unit at t j =25c, unless otherwise specified min. typ. max. characteristics drain source clamp voltage t j = - 40 ...+ 150c, i d = 10 ma v ds(az) 60 - 73 v off state drain current v ds = 32 v, t j = -40...+150 c, v in = 0 v i dss - - 5 a input threshold voltage i d = 0.7 ma v in(th) 1.3 1.7 2.2 v input current - normal operation, i d < i d(lim) : v in = 10 v i in(1) - 30 60 a input current - current limitation mode, i d = i d(lim) : v in = 10 v i in(2) - 120 300 input current - after thermal shutdown, i d =0 a: v in = 10 v i in(3) 800 2200 4000 input holding current after thermal shutdown 1) t j = 25 c t j = 150 c i in(h) 500 300 - - - - on-state resistance v in = 5 v, i d = 3.5 a, t j = 25 c v in = 5 v, i d = 3.5 a, t j = 150 c r ds(on) - - 90 180 120 240 m on-state resistance v in = 10 v, i d = 3.5 a, t j = 25 c v in = 10 v, i d = 3.5 a, t j = 150 c r ds(on) - - 80 160 100 200 nominal load current (iso 10483) v in = 10 v, v ds = 0.5 v, t c = 85 c i d(iso) 3.5 - - a 1 if the input current is limited by external components, low drain currents can flow and heat the device. auto restart behaviour can occur. datasheet 3 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
electrical characteristics parameter symbol values unit at t j =25c, unless otherwise specified min. typ. max. characteristics initial peak short circuit current limit v in = 10 v, v ds = 12 v i d(scp) - 25 - a current limit 1) v in = 10 v, v ds = 12 v, t m = 350 s, t j = -40...+150 c i d(lim) 7 10 15 dynamic characteristics turn-on time v in to 90% i d : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v t on - 40 70 s turn-off time v in to 10% i d : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v t off - 70 150 slew rate on 70 to 50% v bb : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v -dv ds /dt on - 1 3 v/s slew rate off 50 to 70% v bb : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v dv ds /dt off - 1 3 protection functions thermal overload trip temperature t j t 150 165 - c unclamped single pulse inductive energy i d = 3.5 a, t j = 25 c, v bb = 32 v i d = 3.5 a, t j = 150 c, v bb = 32 v e as 1000 225 -- -- -- -- mj inverse diode inverse diode forward voltage i f = 5*3.5a, t m = 300 s, v in = 0 v v sd - 1 - v 2) 1 device switched on into existing short circuit (see diagram determination of i d(lim) ). if the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. 2 integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation . datasheet 4 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
block diagramm terms inductive and overvoltage output clamp hitfet in d v in i d v ds 1 i in s v bb r l 2 3 hitfet v z d s short circuit behaviour v in i d i d(scp) t 0 tm t 2 i d(lim) t 1 input circuit (esd protection) in esd-zd i source esd zener diodes are not designed for dc current > 2 ma @ v in >10v. t 0 : turn on into a short circuit t m : measurementpoint for i d(lim) t 1 : activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t 2 : thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. datasheet 5 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
on-state resistance r on = f(t j ); i d =3.5a; v in =10v -50 -25 0 25 50 75 100 c 150 t j 0 25 50 75 100 125 150 200 r ds(on) typ. max. maximum allowable power dissipation p tot = f(t c ) 0 20 40 60 80 100 120 c 160 150 0 5 10 15 20 25 30 35 40 45 w 55 bts 117 p tot on-state resistance r on = f(t j ); i d = 3.5a; v in =5v -50 -25 0 25 50 75 100 c 150 t j 0 25 50 75 100 125 150 175 200 250 r ds(on) typ. max. typ. input threshold voltage v in(th) = f(t j ); i d =0.7ma; v ds =12v -50 -25 0 25 50 75 100 c 150 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v 2.0 v in(th) datasheet 6 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
typ. transfer characteristics i d = f(v in ); v ds =12v; t j =25c 0 1 2 3 4 5 6 v 8 v in 0 2 4 6 a 10 i d typ. output characteristic i d = f(v ds ); t j =25c parameter: v in 0 1 2 3 4 v 6 v ds 0 2 4 6 a 10 i d vin=3v 4v 5v 6v 10v transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2 s t p -2 10 -1 10 0 10 1 10 k/w r thjc 0 0.005 0.01 0.02 0.05 0.1 0.2 d=0.5 datasheet 7 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
application examples: status signal of thermal shutdown by monitoring input current d s in c v bb hitfet v in r st v in thermal shutdown v c v = r st * i in(3) datasheet 8 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117
datasheet 9 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117 package outlines 1 package outlines a b a0.25 m typical 9.9 0.2 2.8 1) 15.65 0.3 12.95 0...0.15 2.54 0.75 0.1 1.05 0.1 1.27 4.4 b 9.25 0.2 0.05 1) all metal surfaces tin plated, except area of cut. c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 2.4 0.5 0.1 0.2 4.55 13.5 0.5 3x metal surface min. x=7.25, y=12.3 0...0.3 2x 2.4 figure 1 pg-to220-3-1 to meet the world-wide customer requirements for environmentally friendly products and to be compliant with go vernment regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). you can find all of our packages, so rts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
datasheet 10 rev. 1.4, 2012-07-11 smart low side power switch hitfet bts 117 revision history 2 revision history version date changes rev. 1.4 2012-07-11 released through hole automotive green datasheet package drawing update, removed staggered package added through hole version in green package rev. 1.3 2008-12-10 package drawing update rev. 1.2 2008-08-11 package information updated, removed through hole version rev. 1.1 2008-02-22 package parameter (humidity and climatic) removed in maximum ratings aec icon and rohs icon added green product and aec qualified added to feature list added protection footnote on page 4 and changed front page general description package infromation updated to green green explanation added rev. 1.0 2000-05-19 released production version
edition 2012-07-11 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2012. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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